Self-assembled monolayers exposed by metastable argon and metastable helium for neutral atom lithography and atomic beam imaging
نویسندگان
چکیده
We used a beam of noble gas atoms in a metast i ib le xci ted state to expose a th in (1.5 nm) self-assembled monolayer esist applied over a gold-coated sil icon waf'er. We determined exposure damage as a function of dose of metastable atoms by processing the samples in a wet-chemical etch to remove the -cold from unprotected regions and then measuring the reflectir ity with a laser and observing the rnicrostructure with an atomic force micrclscope. We found that the minimum dose required to damage the resist substant ia l ly was l . l (Z)x l0 l5 atoms/cml t . , ' r metastable hel ium, and 25(l) x l0l5 atoms/cm2 for metastable argon. A 1997 Americtut Vut'uunt Sot' iett ' . [s0734-2 r l x(e7)0320s-8]
منابع مشابه
Contamination resists in metastable atom lithography
We have used a metastable argon beam to expose gold-coated silicon substrates covered with a self assembled monolayer (SAM) resist. The substrates have been covered with a patterned mask, with feamres of 10 pm size, and exposed to the atomic beam. Subsequent etching revealed negative contrast patterns, consistent with the formation of a negative contamination resist in the SAM, which we attribu...
متن کاملMicrolithography by using neutral metastable atoms and self-assembled monolayers.
Lithography can be performed with beams of neutral atoms in metastable excited states to pattern self-assembled monolayers (SAMs) of alkanethiolates on gold. An estimated exposure of a SAM of dodecanethiolate (DDT) to 15 to 20 metastable argon atoms per DDT molecule damaged the SAM sufficiently to allow penetration of an aqueous solution of ferricyanide to the surface of the gold. This solution...
متن کاملExposure of self-assembled monolayers to highly charged ions and metastable atoms
The doses of neutral metastable argon atoms (Ar*) and highly charged xenon ions ~HCIs! required to damage self-assembled monolayers ~SAMs! of alkanethiolates on gold are compared in a set of experiments carried out concurrently. The extent of damage to the SAM is determined by developing the samples in a gold etching solution, then measuring the decrease in reflectivity of the gold; '10 Ar* are...
متن کاملAtom lithography with metastable helium
A bright metastable helium He beam is collimated sequentially with the bichromatic force and three optical molasses velocity compression stages. Each He atom in the beam has 20 eV of internal energy that can destroy a molecular resist assembled on a gold coated silicon wafer. Patterns in the resist are imprinted onto the gold layer with a standard selective etch. Patterning of the wafer with th...
متن کاملDemonstration of frequency encoding in neutral atom lithography
We demonstrate a frequency encoding technique for feature placement in atom lithography. Frequency encoding is widely used in MRI, where the frequency distribution of radio waves reveals the position distribution of nuclei in a magnetic gradient. Applied to neutral atom lithography, frequency encoding enables continuously adjustable feature positions and feature densities not limited by the opt...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010